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| P on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som MIN RELI ARY CM50AD05-12H w w at .D w Sh a et e 4U om .c MITSUBISHI IGBT MODULES CM50AD05-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE IC ..................................................................... 50A VCES ............................................................ 600V Insulated Type 3 Inverter + 3 Converter + Brake + Thermistor APPLICATION AC & DC motor controls, General purpose inverters OUTLINE DRAWING & CIRCUIT DIAGRAM 120 1100.25 6 11 11 11 11 11 2.54 2.54 2.54 11 7.62 7.62 P1 P t=0.6 MAIN CIRCUIT TERMINAL 22 600.5 55 63 0.60.1 R S 6 11 w 11 T 11 w B TH1 w U TH2 22 PPS t=0.6 V W GB E GUN GVN GWN 2-R5 6.4 CONTROL CIRCUIT TERMINAL P1 P 10 10 11 11 11 2.54 2.54 2.54 2.54 R S T 2.54 (2.5) OPEN OPEN OPEN N1 GUP EUP t a .D EWP GWP EVP GVP S a e h U t4 e 12 13 .c m o 2.5 1.5 Dimensions in mm 2-4.5 MOUNTING HOLES 6 4 4 13 PPS GUP B GB GUN EUP GVP EVP GVN GWP EWP GWN 6 N1 TH1 TH2 U CIRCUIT DIAGRAM V LABEL w w w .D a aS t ee h 4U t E om .c W Aug. 1999 MITSUBISHI IGBT MODULES on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY CM50AD05-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) INVERTER PART Symbol Parameter G-E Short C-E Short TC = 25C PULSE TC = 25C PULSE TC = 25C Conditions Rating 600 20 50 100 50 100 -- Unit V V A A W Collector-emitter voltage VCES VGES Gate-emitter voltage IC Collector Current ICM IE (Note.1) Emitter Current IEM (Note.1) PC (Note.3) Maximum collector dissipation (Note. 2) (Note. 2) BRAKE PART Symbol VCES VGES IC ICM PC (Note.3) VRRM IFM (Note.3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short TC = 25C PULSE TC = 25C Clamp diode part Clamp diode part Conditions Rating 600 20 50 100 -- 600 50 Unit V V A W V A (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I 2t Parameter Conditions Rating 800 220 50 500 1.0!103 Unit V V A A A2s Repetitive peak reverse voltage Recommended AC input voltage DC output current 3 rectifying circuit Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive I2t for fusing Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Rating -40 ~ +150 -40 ~ +125 2500 0.98 ~ 1.47 140 Unit C C V N*m g AC 1 min. Mounting M4 screw Typical value Aug. 1999 MITSUBISHI IGBT MODULES on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY CM50AD05-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25C) INVERTER PART Symbol ICES VGE(th) IGES Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.2 -- -- -- -- 150 -- -- -- -- -- -- 0.14 -- -- Max. 1 7.5 0.5 2.8 -- 5.0 3.8 1.0 -- 120 300 200 300 2.8 110 -- -- -- Unit mA V A V VGE = VGES, VCE = 0V Tj = 25C Collector-emitter saturation voltage IC = 50A, VGE = 15V VCE(sat) Tj = 150C Input capacitance Cies VCE = 10V Output capacitance Coes VGE = 0V Cres Reverse transfer capacitance QG VCC = 300V, IC = 50A, VGE = 15V Total gate charge td (on) Turn-on delay time VCC = 300V, IC = 50A tr Turn-on rise time VGE1 = VGE2 = 15V td (off) RG = 13 Turn-off delay time tf Turn-off fall time Resistive load VEC(Note.1) Emitter-collector voltage IE = 50A, VGE = 0V trr (Note.1) Reverse recovery time IE = 50A, VGE = 0V Qrr (Note.1) Reverse recovery charge die / dt = - 100A / s Rth(j-c)Q IGBT part, Per 1/6 module Thermal resistance Rth(j-c)R FWDi part, Per 1/6 module (Note.4) nF nC ns V ns C C/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Test conditions VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.2 -- -- -- -- 150 -- -- -- Max. 1 7.5 0.5 2.8 -- 5.0 3.8 1.0 -- 1.5 -- -- Unit mA V A V VGE = VGES, VCE = 0V Tj = 25C Collector-emitter saturation voltage IC = 50A, VGE = 15V Tj = 150C Input capacitance VCE = 10V Output capacitance VGE = 0V Reverse transfer capacitance VCC = 300V, IC = 50A, VGE = 15V Total gate charge IF = 50A, Clamp diode part Forward voltage drop IGBT part Thermal resistance Clamp diode part (Note.4) nF nC V C/W CONVERTER PART Symbol IRRM VFM Rth(j-c) Parameter Repetitive reverse current Forward voltage drop Thermal resistance Test conditions VR = VRRM, Tj = 150C IF = 50A Per 1/6 module Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 -- Unit mA V C/W Aug. 1999 MITSUBISHI IGBT MODULES on. ange. ificati h l spec bject to c a fina su is not limits are : Thismetric e Notice para Som P MIN RELI ARY CM50AD05-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE THERMISTOR PART Symbol RTH B ( Parameter Resistance B Constant Test conditions TC = 25C Resistance at 25C, 50C (Note.5) Min. -- -- Limits Typ. (100) (4000) Max. -- -- Unit k K ) : These parametric limits are tentative. COMMON RATING Symbol Rth(c-f) Note.1 2 3 4 5 Parameter Contact thermal resistance Test conditions Case to fin, Thermal compound applied* 1 (1 module) Min. -- Limits Typ. -- Max. -- Unit C/W IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. B = (InR1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K) R2 : Resistance at T2(K) *1 : Typical value is measured by using Shin-etsu Silicone "G-746". Aug. 1999 |
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